收藏本站

SUP45N03-13L
Vishay Siliconix
N-Channel 30-V (D-S), 175 _ C MOSFET
PRODUCT SUMMARY
V (BR)DSS (V)
30
TO-220AB
r DS(on) ( W )
0.013 @ V GS = 10 V
0.02 @ V GS = 4.5 V
I D (A)
45 a
45 a
D
G
DRAIN connected to TAB
G D S
S
Top View
N-Channel MOSFET
SUP45N03-13L
ABSOLUTE MAXIMUM RATINGS (T C = 25 _ C UNLESS OTHERWISE NOTED)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Symbol
V DS
V GS
Limit
30
" 10
Unit
V
Continuous Drain Current (T J = 175 _ C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy b
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
T C = 25 _ C
T C = 125 _ C
L = 0.1 mH
T C = 25 _ C
I D
I DM
I AR
E AR
P D
T J , T stg
45 a
34 a
100
45
100
88 c
–55 to 175
A
mJ
W
_ C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
Junction-to-Case
Free Air
R thJA
R thJC
85
1.7
_ C/W
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70804
S-05011—Rev. F, 29-Oct-01
www.vishay.com
1
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SUP60N02-4M5P-E3 MOSFET N-CH D-S 20V TO220AB
SUP60N10-16L-E3 MOSFET N-CH D-S 100V TO220AB
SUP60N10-18P-E3 MOSFET N-CH D-S 100V TO220AB
SUP65P04-15-E3 MOSFET P-CH 40V 65A TO220AB
SUP75N03-04-E3 MOSFET N-CH D-S 30V TO220AB
SUP75P03-07-E3 MOSFET P-CH D-S 30V TO220AB
SUP90N08-7M7P-E3 MOSFET N-CH D-S 75V TO220AB
SUP90P06-09L-E3 MOSFET P-CH 60V 90A TO220AB
相关代理商/技术参数
SUP45N05-20L 功能描述:MOSFET 50V 45A 93W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUP45N05-20L-E3 功能描述:MOSFET 50V 45A 93W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUP45N05-20L-T1-E3 制造商:Vishay Intertechnologies 功能描述:N CHANNEL MOSFET, 50V, 45A, Transistor Polarity:N Channel, Continuous Drain Curr
SUP50N03-5M1P 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET
SUP50N03-5M1P-GE3 功能描述:MOSFET 30V 50A N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUP50N10-21P-GE3 制造商:Vishay Semiconductors 功能描述:N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel 制造商:Vishay Siliconix 功能描述:MOSFET N-CH 30V TO220AB 制造商:Vishay Intertechnologies 功能描述:Single N-Channel 100 V 0.021 O 30.2 nC Flange Mount Power Mosfet - TO-220AB
SUP52N20-39P-E3 制造商:Vishay Siliconix 功能描述:MOSFET N TO-220
SUP53P06-20 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 60-V (D-S) MOSFET